三星宣布完成5纳米EUV工艺研发

Samsung announced the completion of 5-nanometer EUV process development

IT之家

IT之家4月16日消息 三星官网发布消息称,三星电子已经成功完成5nm EUV开发,以实现芯片的更大面积扩展和带来超低功耗。三星电子称,其5纳米(nm)FinFET工艺技术的开发已经完成,现在可以为客户提供样品。通过在其基于极紫外(EUV)的工艺产品中添加另一个尖端节点,三星称再次证明了其在先进晶圆代工市场的领导地位。与7nm相比,三星的5nm FinFET工艺技术将逻辑区域效率提高了25%,功耗降低了20%,性能提高了10%,从而能够拥有更多创新的标准单元架构。三星称,5nm的另一个主要优点是可以将所有7nm知识产权(IP)重用到5nm。因此,7nm客户过渡到5nm将极大地受益于降低的迁移成...

Samsung Electronics has successfully completed the development of 5nm EUV in order to achieve a larger area of chip expansion and bring ultra-low power consumption, according to the information released by Samsung's official website on April 16. Samsung Electronics said that its 5 nanometer (nanometer) FinFET process technology has been developed and can now provide samples for customers. By adding another cutting-edge node to its EUV-based process products, Samsung said it had once again demonstrated its leadership in the advanced wafer manufacturing market. Compared with 7nm, Samsung's 5nm FinFET technology improves the efficiency of logic region by 25%, reduces power consumption by 20%, and improves performance by 10%, thus enabling Samsung to have more innovative standard cell architectures. Samsung says another major advantage of 5nm is that all 7Nm intellectual property rights (IP) can be reused to 5nm. Therefore, the transition from 7Nm customers to 5nm will greatly benefit from the reduced migration to ____________

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